Sample 14

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
3	18	Si wafer - not bonded	50	0	5.0	200	400	150	10	14.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 11.756 um
Calculated remaining resist as 7.37um, indicating an erosion of 1.38um in 10 minutes of etching
This equates to an erosion rate of 138 nm/min
The etch depth of 4.39um in 10 mins indicates an etch rate of 439.0nm/min
The selectivity is therefore 3.19:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	11.755700
Remaining resist (um)	7.365700
Semiconductor etched(um)	4.390000
Etch rate (nm/min)	439.000000
Erosion rate (nm/min)	137.530000
Selectivity	3.192031